Cree SiC MOSFET

C3M0021120K

Cree SiC MOSFET C3M In Stock

Cree C3M0021120K SiC MOSFET, 1200 V, 21 mOhm, 100 A in TO-247-4 with 175 °C junction rating for chargers, solar and supplies.

The C3M0021120K is a Cree C3M third-generation silicon carbide MOSFET rated at 1200 V with a typical on-resistance of 21 milliohm and a 100 A current rating, in the four-lead TO-247-4 package. It sits just above the lowest on-resistance part in the family, trading a little on-resistance for a cost advantage while keeping the wide-bandgap benefits of clean, fast switching and a 175 °C maximum junction temperature. Silicon carbide has no tail current and switches far faster than silicon with lower switching loss, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in on-board chargers, solar inverters, energy storage and power supplies. The four-lead package adds a dedicated driver-source pin that removes source inductance from the gate loop, reducing ringing and switching loss. The robust body diode with low reverse-recovery charge simplifies the freewheeling path, and the 8 mm drain-source creepage supports high-voltage layouts. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.

FAE Professional Review

The C3M0021120K is the value option in the Cree 1200 V C3M line: a low on-resistance at 1200 V for a price that makes SiC practical in mainstream designs. It suits medium-power chargers, solar stages and power supplies where efficiency still matters but cost is tight. Keep the layout disciplined and use the driver-source pin.
ParameterValue
Blocking Voltage1200 V
RDS(on)21 mΩ
Current Rating100 A
PackageTO-247-4
Tj max175 °C

Application Circuits

Application

Medium-power chargers

Reference circuits and application schematics for Medium-power chargers are available from our FAE team.

Application

Solar inverters

Reference circuits and application schematics for Solar inverters are available from our FAE team.

Application

Switched-mode power supplies

Reference circuits and application schematics for Switched-mode power supplies are available from our FAE team.

Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.

Related Documents

  • Manufacturer Datasheet - C3M0021120K Download
  • Import Declaration - C3M0021120K Download
  • Certificate of Origin Download
  • RoHS Compliance Download

Alternative Part Numbers

ModelPackageNoteAction
C3M0016120K TO-247-4 Lower on-resistance option for higher efficiency View

Complementary Part Numbers

ModelPackageNoteAction
C4D10120A TO-220-2 SiC Schottky diode for the freewheeling path View
C3D08065A TO-220-2 650 V SiC diode for a lower-voltage rail View

Frequently Asked Questions

When should I choose the 21 milliohm part?

Choose it when a 1200 V SiC MOSFET is the right technology but the current is moderate and cost matters, such as a medium-power on-board charger, a solar stage or a power supply. The 21 milliohm on-resistance at 100 A suits these classes with margin.

For maximum efficiency, step up to the C3M0016120K.

Request this SiC MOSFET for your project

Can I use a standard gate driver?

The C3M family works with a standard SiC gate drive of about +15 V on and -4 V off, so it is compatible with common SiC gate drivers. The TO-247-4 package helps keep the gate loop short, but you should still choose the gate resistor for your EMI target.

Our FAE team can review your gate-drive design.

Discuss SiC gate drive with us

Is the part genuine and documented?

BeiLuo supplies factory-traceable C3M0021120K devices through Cree/Wolfspeed's authorized channel, with import declaration, certificate of origin and RoHS files on every order. The class is normally held in stock.

Request a sample for your own efficiency testing.

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