C3M0016120K
Cree C3M0016120K SiC MOSFET, 1200 V, 16 mOhm, 115 A in TO-247-4 with 175 °C junction rating for chargers, solar and DC-DC.
The C3M0016120K is a Cree C3M third-generation silicon carbide MOSFET rated at 1200 V with a typical on-resistance of 16 milliohm and a 115 A current rating at a 25 °C case, in the four-lead TO-247-4 package. Silicon carbide turns off cleanly with no tail current and switches far faster than silicon with lower loss, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in on-board chargers, EV charging, solar inverters, energy storage and high-voltage DC-DC converters. The four-lead package adds a dedicated driver-source pin that removes source inductance from the gate loop, which reduces gate ringing and switching loss and makes fast SiC switching easier to control. The device is rated to a 175 °C maximum junction temperature, so the designer can shrink the heatsink, and its robust body diode with low reverse-recovery charge simplifies the freewheeling path. The 8 mm creepage between drain and source supports high-voltage layouts. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Designers should confirm the gate drive, loop inductance and hot on-resistance for the thermal design. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.
FAE Professional Review
The C3M0016120K is the flagship low on-resistance 1200 V part in the Cree C3M line, and the four-lead package is what makes it easy to use at high speed. It shines in high-frequency chargers and solar stages where efficiency and size matter. Keep the gate loop short, tie the driver source to the dedicated pin, and tune the gate resistor to your EMI target.
| Parameter | Value |
|---|---|
| Blocking Voltage | 1200 V |
| RDS(on) | 16 mΩ |
| Current Rating | 115 A |
| Package | TO-247-4 |
| Tj max | 175 °C |
Application Circuits
EV on-board chargers
Reference circuits and application schematics for EV on-board chargers are available from our FAE team.
Solar inverters
Reference circuits and application schematics for Solar inverters are available from our FAE team.
High-voltage DC-DC
Reference circuits and application schematics for High-voltage DC-DC are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| C3M0021120K | TO-247-4 | Higher on-resistance, cost-optimized option in the same class | View |
Complementary Part Numbers
Recommended Complementary Products
Frequently Asked Questions
What projects suit the C3M0016120K?
It fits high-frequency, high-efficiency converters that run from a 1200 V class bus, such as on-board chargers, EV charging stages, solar inverters and high-voltage DC-DC converters. The 16 milliohm on-resistance keeps conduction loss small at 115 A.
For a cost-sensitive design, the C3M0021120K may be enough.
How do I drive this device?
The C3M family works with a standard gate drive of about +15 V on and -4 V off, so it is compatible with common SiC gate drivers. Connect the dedicated driver-source pin to the driver return, keep the gate loop short and choose the gate resistor for your EMI target.
Our gate-drive notes cover the practice.
Is the part genuine and documented?
BeiLuo supplies factory-traceable C3M0016120K devices through Cree/Wolfspeed's authorized channel, with import declaration, certificate of origin and RoHS files on every order. The class is normally held in stock.
Request a sample for your own efficiency testing.